您的当前位置:首页COMBINED ELECTROCHEMICAL AND CHEMICAL ETCHING PROC

COMBINED ELECTROCHEMICAL AND CHEMICAL ETCHING PROC

2024-06-19 来源:世旅网
专利内容由知识产权出版社提供

专利名称:COMBINED ELECTROCHEMICAL AND

CHEMICAL ETCHING PROCESSES FORGENERATION OF POROUS SILICONPARTICULATES

发明人:Sibani Lisa Biswal,Michael S. Wong,Madhuri

Thakur,Steven L. Sinsabaugh

申请号:US14149055申请日:20140107

公开号:US20140193711A1公开日:20140710

专利附图:

摘要:Embodiments of the present disclosure pertain to methods of preparingporous silicon particulates by: (a) electrochemically etching a silicon substrate, whereelectrochemical etching comprises exposure of the silicon substrate to an electric currentdensity, and where electrochemical etching produces a porous silicon film over the siliconsubstrate; (b) separating the porous silicon film from the silicon substrate, where theseparating comprises a gradual increase of the electric current density in sequentialincrements; (c) repeating steps (a) and (b) a plurality of times; (d) electrochemicallyetching the silicon substrate in accordance with step (a) to produce a porous silicon filmover the silicon substrate; (e) chemically etching the porous silicon film and the siliconsubstrate; and (f) splitting the porous silicon film and the silicon substrate to formporous silicon particulates. Further embodiments of the present disclosure pertain to theformed porous silicon particulates and anode materials that contain them.

申请人:Sibani Lisa Biswal,Michael S. Wong,Madhuri Thakur,Steven L. Sinsabaugh

地址:Houston TX US,Houston TX US,Houston TX US,Uniontown OH US

国籍:US,US,US,US

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容