专利名称：Method for fabricating a thin film transistor发明人：GLUECK, JOACHIM, DR.,HENKE, SASCHA, DR.申请号：EP98108322.3申请日：19980507公开号：EP0883169A2公开日：19981209
专利附图：
摘要：A process for producing a thin film transistor (TFT), having an amorphous siliconsemiconductor layer and n-doped amorphous silicon drain and source contacts, involvesapplying an etch-stop layer (3) of semiconductor material between the semiconductorlayer (2) and the n-doped amorphous silicon layer (4) for the drain and source contacts
(D, S). Preferably, the etch-stop layer (3) consists of microcrystalline amorphous andundoped silicon ( mu -c Si:H), the semiconductor layer (2) consists of i-a Si:H and the drainand source contacts (D, S) consist of a n<+>-a Si:H layer, all these layers being depositedin the same vacuum. Also claimed is a TFT with an amorphous silicon semiconductor layer(2) an overlying further semiconductor layer (3) and drain and source contacts (D, S) of n-doped amorphous silicon.
申请人：ROBERT BOSCH GMBH
地址：Postfach 30 02 20 70442 Stuttgart DE
国籍：DE
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