SMBYT03-40资料

®SMBYT03

FAST RECOVERY RECTIFIER DIODES

FEATURES

VERY LOW REVERSE RECOVERY TIMEVERY LOW SWITCHING LOSSESLOW NOISE TURN-OFF SWITCHINGSURFACE MOUNT DEVICE

DESCRIPTION

Single high voltage rectifier ranging from 200V to400 V suited for Switch Mode Power Supplies andother power converters.

SMCABSOLUTE MAXIMUM RATINGSSymbolIF(RMS)IF(AV)IFSMTstgTjRMS forward currentAverage forward currentNon repetitive surge peak forward currentStorage and junction temperature rangeTl=55°C δ = 0.5tp=10mssinusoidalParameterValue10360- 40 to + 150- 40 to + 150UnitAAA°C°CSymbolVRRMParameterRepetitive peak reverse voltageValue400UnitVTHERMAL RESISTANCESymbolRth (j-l)Junction-leadsParameterValue20Unit°C/WOctober 1999 - Ed : 2C1/5

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SMBYT03

ELECTRICAL CHARACTERISTICSSTATIC CHARACTERISTICSSymbolVF *Tj = 25°CTj = 100°CIR **Tj = 25°CTj = 100°CPulse test : * tp = 380 µs, duty cycle < 2 %

** tp = 5 ms, duty cycle < 2 %

Test ConditionsIF = 3 AMin.Typ.Max.1.5UnitV1.05VR = VRRM0.21.4100.6µAmARECOVERY CHARACTERISTICSSymboltrrTj = 25°CTest ConditionsIF = 0.5AIR = 1AIF = 1AVR = 30VIrr = 0.25AdIF/dt = -15A/µsMin.Typ.Max.2560UnitnsTURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)SymboltIRMIRMTest ConditionsVCC = 200V IF = 3A Lp ≤ 0.05µH Tj = 100°C dIF/dt = -50A/µsMin.Typ.351.5Max.502UnitnsATo evaluate the conduction losses use the following equation :P = 1.1 x IF(AV) + 0.08 x IF2(RMS)

Voltage (V)Marking200C2300C3400C4Laser marking

Logo indicates cathode

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SMBYT03

Fig.1 : Low frequency power losses versusaverage current.

PF(av)(W)=0.1=0.05=0.2=0.5=1Fig.2 : Peak current versus form factor.

5.55.04.54.03.53.02.52.01.51.00.56050IM(A)TIM4030TP=0.5W=tp/Ttp2010P=1.5WP=2.5W0.00.0IF(av)(A)0.51.01.52.02.5=tp/Ttp3.03.54.000.00.10.20.30.40.50.60.70.80.91.0Fig.3 : Non repetitive surge peak forward currentversus overload duration.

IM(A)IMt=0.5Fig.4 : Relative variation of thermal impedancejunction to lead versus pulse duration.

KZth(j-c)(tp.K=1Rth(j-c)=0.22018161412108642)=0.5Tc=25oCTc=40oCTc=55oC0.1=0.1TSinglepulse00.001t(s)0.010.11100.010.001tp(s)0.010.11=tp/Ttp10Fig.5 : Voltage drop versus forward current.(Maximum values)

VFM(V)Fig.6 : Average current versus ambienttemperature. (duty cycle : 0.5)

IF(av)(A)Rth(j-a)=Rth(j-l)=0.5T3.02.73.53.02.52.02.4Tl=100oC2.11.81.51.20.90.60.30.00.010.11=tp/TRth(j-a)=65oC/W1cm2Cutp1.51.0IFM(A)10500.5Tamb(oC)0.00204060801001201401603/5

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SMBYT03

Fig.7 : Recovery time versus dIF/dt.

Fig.8 : Peak forward voltage versus dIF/dt.

Fig.9 : Peak reverse current versus dIF/dt.

Fig.10 : Recovery charge versus dIF/dt. (typical values)

Fig.11 : Dynamic parameters versus junction temperature.Fig.12 : Thermal resistance junction to ambientversus copper surface under each lead.

10090807060504030201000.00.51.01.52.02.53.03.54.04.55.0Scu(cm2)Rth(j-a)Printedcircuit:epoxy(e=35um)4/5

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SMBYT03

PACKAGE MECHANICAL DATASMC

DIMENSIONSE1REF.A1A2bcEE1E2DLMillimetersMin.1.900.052.900.157.756.604.405.550.75Max.2.450.203.20.418.157.154.706.251.60InchesMin.0.0750.0020.1140.0060.3050.2600.1730.2180.030Max.0.0960.0080.1260.0160.3210.2810.1850.2460.063DEA1CLA2bFOOTPRINT DIMENSIONSSMC

3.32.04.22.0Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences ofuse of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted byimplication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject tochange without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.

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