专利名称：GAS BARRIER FILM, PROCESS FOR
PRODUCTION OF GAS BARRIER FILM, ANDELECTRONIC DEVICE
发明人：II HIROMOTO,HONDA MAKOTO,OISHI
KIYOSHI,SUZUKI ISSEI,ITO SATOSHI
申请号：EP11812245申请日：20110707公开号：EP2599621A4公开日：20140319
摘要：The present invention provides a gas barrier film having high barrier properties,folding/bending resistance and smoothness and excellent cutting suitability, and alsoprovides an organic photoelectric conversion element equipped with the gas barrier film.The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face ofat least one surface of a base material (2), wherein the gas barrier layer unit (5) comprisesa first barrier layer (3) formed by a chemical vapor deposition method and a secondbarrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) toform a coating film and modifying the coating film, and wherein the second barrier layer(4) has an unmodified region (4B) on a side facing the base material and a modified region(4A) on a side facing the front layer of the film.
申请人：KONICA MINOLTA HOLDINGS, INC.
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